Study On Preparration And Properties Of Ga₂O₃ Materials

Ga2O3 is a kind of wide band gap compound semiconductor material. In addition to the excellent optoelectronic properties, it also has good thermal and chemical stability.In particular, the monoclinic b-Ga2O3 is highly transparent in the deep ultraviolet region,and its transmission can reach more than 80%, which is a kind of natural material which can be made of a transparent conductive film DUV. At the same time, it also has good gas sensing properties, is one of the candidate materials of high-temperature oxygen-sensitive devices. So, it becomes a hot topic with the development of modern semiconductor photoelectric detection technology, the disadvantage of infrared detection technology becomes more and more, such as false positives, for infrared can penetrate the atmosphere to form a serious interference to it. But the UV detector is able to avoid this interference, just because ultraviolet, especially solar blind UV(200-280nm) is absorbed by the ozone layer when they entry into the atmosphere. So that, UV detector has a wide range of application requirements in the fields of aerospace, military and civilian.In this thesis, we discussed the structure characteristics of Ga2O3, basic nature, and the preparation process, and also discussed its application in the field of modern information technology materials. Magnetron sputtering is a technology of thin film deposition with a high speed and low temperature compared with several other film preparation methods, it has a high film quality, low-cost advantage, it can produce high-quality, low-cost film. According to the existing experimental conditions, RF magnetron sputtering technique was used to grow films, the film’s surface morphology,structural characteristics and optical properties were analyze by X-ray diffraction(XRD), scanning electron microscopy(SEM), UV-Vis and fluorescence spectroscopy and other techniques. The optimum parameters for preparing thin films have been got by the studing about influence on the nature of the sample from the changes in process parameters and heat treatment.Metal interdigital electrode on the film were deposited by the method of vacuum evaporation, which is a MSM structure detector with Ohmic contact, the photoelectric response characteristics of the sample were tested with the equipment of254nm-mercury, 405nm-laser,probe station and semiconductor parameter analyzer andso on. The influence to the optical and electrical properties from the film process conditions were studied and analysed. Finally We have got the film sample which has a high light and dark current ratio(5×103).At the same time, the Ga2O3 nanomaterials have been grown, We analyzed their surface morphology, structure, characteristics, and the influence to nanomaterials properties from the preparation.