The Research On Double-barrier And Quantum-well RTD Based On GaAs Superlattice

Resonant tunneling diode is a type of nanoelectron devices, which is based on quantum resonant tunneling mechanism. It features negative differential resistance characteristic with two bistable states and self-locking phenomena, high-speed and low power operation. At present, its application in the field of integrated circuit has been carried out a lot, and some achievements have been made. With the development of MBE and MOCVD growth technology, RTD has become one of the first production of nano-quantum devices. But due to the lack of research on the theory and application of RTD in domestic, epitaxial technology in atomic precision about the process remains to be improved, which makes the performance of the RTD produced not ideal.In order to study the RTD grown on GaAs substrate, firstly, the research progress and the principle of electron transportation in the RTD was summarized in this thesis, based on which an analytical model on transportion properties of symmetric double barriers RTD is simply described.A reasonable structure of RTD based on GaAs was designed preliminary. Then, electrical properties of symmetric DBS RTD device based on GaAs/Al Ga As was studied extensively by simulated experiments with SILVACO TCAD. The laws and characteristics of the GaAs/AlGaAs based on double-barrier RTD of impact from applied bias, barrier and well width on the transmission coefficient and negative differential resistor(NDR) was studied.According to discussions and analyses of the experimental results obtained, considering the requirements of low-voltage and low power for MVL circuit applications, designed parameters window of the GaAs/AlGaAs based on symmetric DBS RTD was put forward.In order to further reduce the peak voltage, improve the resonant tunneling current, and be better suitable for multivalued logic circuits, an method, which mainly improve transmission coefficient by changing barrier width of the asymmetric RTD under reverse bias was put forward.Finally, the required material parameters of double-barrier RTD based on GaAs/AlGaAs for multi-valued logic circuit was put forward.