Study And Preparation Of GeH Monolayer

Exfoliation of graphene has shown that it is not only possible to create stable, single atom-thick sheets from a 3-dimensional crystalline solid, but that these materials have fundamentally different properties than the parent material. Modifying the surface of graphene has been challenging because of its sp2 hybridization, which limits the application of graphene. Within the same family of carbon, such as silicon and germanium, there are the possibilities of layered materials that are structurally similar to grapheme, however, contain the sp3 hybridization needed for functionalization. This functionalization could lead to a tunable band gap necessary for optoelectronics. GeH, an sp3 analogue of Graphene, has become a new research hotspot, due to its superior characteristics.GeH, a derivative of Ge, can be prepared by reaction of CaGe2 alloy and concentrated hydrochloric acid. CaGe2 can be synthetized by high pure Ca and Ge. In this dissertation, firstly, investigated the effect of reactant ratio and reaction temperature on the synthesis of of CaGe2 alloy. According to the result of XRD, using the stoichiometric ratio(Ca:Ge=1:2) at high temperature(~1000℃) can prepare pure CaGe2 more easily. Secondly, prepared GeH using CaGe2 and concentrated HCl at low temperature. used optical microscope, XRD, Raman spectrum, FTIR and XPS to characterize the property of GeH. Finally, used the method of mechanical exfoliation to prepare monolayer and few layers of GeH.In summary, systematically studied the method of preparation and characterization of GeH material, which has strong guiding significance for preparation and application of GeH.