Effects Of Temperature And Doping Concentration On The Electronic State Structure And Sub - Band Optical Absorption Coefficient Of Si Delta Doped Quantum Well System

Under the effective mass approximation, we will solve Schrodinger equation and Poisson equation of quantum well system self-consistently, get electronic states of a quantum well system structure under the condition that the temperature is not zero, and then study the influence of temperature and doping concentration of the different quantum well systems.The main research contents of this article are:1. Through the self-consistent solution of Schrodinger equation and Poisson equation of Si delta doped GaAs one-dimensional infinite quantum well, under the condition that the temperature is not zero, we studied the influence of temperature and doping concentration on subband energy levels, Fermi energy level, electron population, self-consistent potential and intersubband optical absorption coefficient. With the increase of temperature, the subband energy levels increase, Fermi level decreases, self-consistent potential well gets deep, and the total intersubband optical absorption coefficient decreases. What’s more, with the increase of doping concentration, subband energy levels and Fermi level increase, the electronic populations of energy levels increase, and the total intersubband optical absorption coefficient increases. This paper also studied the influence of the incident light energy on intersubband optical absorption coefficient, and found that the total absorption coefficient had two peaks, whose main contributors are level (1-2) and (1-4) respectively.2. Through the self-consistent solution of Schrodinger equation and Poisson equation of Si delta doped AlxGa1-xAs/GaAs double quantum wells system, under the condition that the temperature is not zero, we studied the influence of temperature and doping concentration on subband energy levels and corresponding splitting energy levels, Fermi energy level, electron population and intersubband optical absorption coefficient. We found that the trend of subband levels, Fermi level, electron population and absorption coefficient are the same as the one-dimensional infinite potential well structure; the difference is that the electrons of one-dimensional infinite potential well structure are mainly in doped region, but the electrons of two-dimensional potential wells structure are separated from doped region, focused on the potential wells without doping. We also studied the influence of incident energy on intersubband optical absorption coefficients, and found that with the increase of incident light energy, the total absorption coefficient had four peaks, whose main contributors are level (2-3),(1-4),(4-5),(3-6),(2-5),(1-6),(2-7) and (1-8).Through the theoretical calculation and by using Numerov algorithm and Origin software, we analyze the influence of temperature and doping concentration on electronic states and intersubband optical absorption coefficients in two different quantum well systems, which provide a reference for further study of the influence of temperature and doping concentration on semiconductor materials.