Design And Fabrication Of White Organic Light Emitting Device With High Color Rendering Index

In recent years, organic light-emitting devices (OLED) has been well knownand become consumer goods. It has potentials for lighting applications. More andmore devices are produced. Ultra-thin and transparent equipment attracts attentions.As the light source, while the energy consumption has been the focus of attention. Butonly with high color rendering the lighting source can restore the real color of theobject and reveal the object more vivid and natural. In this paper, we fabricatephosphorescent OLED with the structure ofITO/MoO3/TAPC:MoO3/TAPC/TCTA/POAPF:Ir(MDQ)2(acac)/POAPF:Fir6/POAPF:Ir(5-Phppy)3/POAPF:Fir6/TpPyPB/LiF/Mg:Ag. The general CRI (Ra) of this deviceis82and R9is75. The average of R9～R12is69. To further improve CRI, bluefluorescent agent and deep red phosphorescent agent are employed in the followingthree-color device. And the devices have the structure:ITO/MoO3(2nm)/TAPC(30nm)/DOPPP(15nm)/CBP(1nm)/CBP:10%Ir(β-ppy)3(5nm)/CBP:3%Ir(pmiq)2(acac)(2nm)/BmPyPB (40nm)/LiF(0.5nm)/Mg:Ag(120nm). At7.5V the Rais up to91and the special CRI R9achieves86. It indicates that widerspectrum can contribute to higher color reproduction. For this case we design afour-color white OLED: ITO/MoO3(3nm)/NPB:10%MoO3(10nm)/NPB(20nm)/TCTA(5nm)/DOPPP(5nm)/26DCzPPy(3nm)/26DCzPPy:12%F3Irpic(6.5nm)/26DCzPPy:6%PO-01(4.5nm)/26DCzPPy:5%Red(2nm)/BmPyPB(40nm)/LiF(0.5nm)/Mg:Ag. The Rais98,97,96,96and95at driving voltage4V,4.5V,5V,5.5Vand6V respectively. Particularly at5V R9is up to91and the average of14specialCRIs reaches95.