Inp Surface Modification And Research On Optical Properties

InP materials have important applications in optoelectronic and microelectronic devices. But the serious surface problem restricts the development of InP based devices. Passivation methods are adopted by the researchers at home and abroad to decrease the surface state. But the improvement of passivation effect and the preventment of passivation effect degradation are difficult problems to overcome in current time. On the research difficulties above, this paper carried out the research content as follows:Ammonium sulfide ((NH4)2S) solution used as passivator to passivate the n-type InP surface. We optimized the passivation condition, the surface oxides was effective removed and the photoluminescence (PL) intensity was improved3.2times compared with the untreated ones.Al2O3films were deposited on the surface of sulfur (S)-passivated n-type InP using atomic deposition (ALD). Al2O3films could prevent the passivation layer from being oxidized. The stability of the coated samples was improved, and therefore the luminescent properties of the samples can be further enhanced. InP periodic nanostructures were synthesized by linearly polarised femtosecond laser. The optical properties of the surface can be improved effectively by depositing Al2O3films on the nanometer materials.We analyzed and identified the light source of the samples before and after the passivation by low-temperature PL spectra and Raman spectra.