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The Research Of FHXD Power MOSFET Products Reducing Internal Resistance Project

Posted on:2014-08-31Degree:MasterType:Thesis
Country:ChinaCandidate:H GanFull Text:PDF
GTID:2268330425476910Subject:Project management
Abstract/Summary:PDF Full Text Request
Higher resistance problems of Power MOSFET products is one of the problems in thesemiconductor industry popular, Power MOSFET products internal resistance on the high side,not only makes the products appear in the process of using more power loss, can also affectthe surrounding the use of other devices, causes the engine failure.From the presentinvestigation, the cause of Power MOSFET products internal resistance on the high side, theencapsulation of factors account for a large part of how to reduce the Power MOSFETproducts within tolerance of the packaging industry is the popular issue.In this paper asemiconductor assembly house production process in Guangzhou as the background, usingthe taguchi method is proposed to optimize the encapsulate a production process parametersdesign, so as to achieve the purpose of reduce internal resistance of Power MOSFETproducts.Quality, time and cost are the three major content in the research of project management,this paper studies from the perspective of quality management, using taguchi method asguidance in order to develop, first of all, combined with the existing problems of higherpower field effect tube resistance, brainstorming and fishbone diagram analysis method, todetermine the causes of product problems of higher resistance, robust design thought of usingthe taguchi method to design parameters in the test, the selected factors and levels, to signal tonoise ratio as an index, with orthogonal table L9(34) is a tool for testing scheme design,through the analysis of signal to noise ratio, the result of the test data analysis, varianceanalysis and sensitivity analysis, it is concluded that the best results, and through the testverifies the feasibility of the results, from the aspects of quality and cost to evaluate,eventually determine the best combination of the results, so as to realize the goals to reduceinternal resistance of Power MOSFET products.Finally,This paper made a summary,and put forward to improve part of the researchand analysis, and the future research direction and content is discussed.
Keywords/Search Tags:Taguchi method, Robust design, Parameter design, Signal to noise ratio, Orthogonal table
PDF Full Text Request
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