Study On Fixed-abrasive Lapping SiC Crystal Substrate

SiC single-chip has a variety of electronic and physical properties, such as high electricalperformance, good thermal conductivity, large band gap, high critical breakdown fieldstrength, and so on. It has become the most promising semiconductor materials. It has beenwidely used in microelectronics photonics, semiconductor lighting, integrated circuits, and soon. With the rapid development of the light emitting diode (LED), the requirement for highsurface quality of Silicon carbide crystal substrate keeps continuous increasing. Fixedabrasive lapping is a practical method that can realize global planarization. It has importanttheoretical guiding significance and practical application value that we learn about the fixedabrasive lapping on SiC single-chip.There are many methods been used to arrange the grinding tests in the paper, such as thesingle factor selecting method, the factorial test method and the orthogonal matrixexperimental method. There are many methods been used to analyze the test data, such as therange analysis, the variance components method and the factor-indicator diagram. Theresearch contents and conclusions mainly includes the following several aspects.(1) We getthe best paste of the free abrasives. The optimum formula is that research assistant agentcontent is8%, dispersing agent content is28%, thickening agent content is20%, lubricantcontent is18%, abrasive content is6%, reconcile the agent content is20%.(2) We researchon the influence of the free abrasive. The diamond abrasive paste material removal rategrinding paste is higher than others.(3) We learn something about the consolidation abrasivegrinding disc. We come to a conclusion that the material removal rate increased with theincrease of the abrasive grain size and the material removal rate with the increase with theincrease of the abrasive.(4) We research on the consolidation abrasive grinding disccontinuous working time. It is been concluded that the surface roughness after grinding of theSiC crystal substrate gradually increased along with the increase of milling time. Leveling offafter reach a certain value change. The material removal rate decreases gradually with theincrease of milling time.(5) We compare to consolidation abrasive grinding and free abrasivegrinding. It is been concluded that consolidation abrasive grinding surface roughness is muchlower than free abrasive grinding. Consolidation abrasive grinding surface roughness is better than free abrasive grinding. Consolidation abrasive grinding material removal is higher thanfree abrasive grinding. So, consolidation abrasive grinding is better than free abrasivegrinding on abrasive SiC crystal substrate.