Enhancing Near-infrared Sensitive In Silicon-based APD

As the development of laser technology and photon detection technology basedon near infrared,improving the APD near-infrared sensitive and quantum efficiency,especially at1064nm, is particularly urgent. The purpose of this paper is to improvenear-infrared sensitive quantum efficiency of the Silicon-Base SACM-APD.First, based on the technology of sulfur doping, this paper analyses the reasonsof the absorption properties changing of the sulfur doped silicon. This paper alsomodeled The molecular structure of sulfur doping silicon material. We then deducingthe mechanism of Fermi level under different doping concentration of S.Secondly, this paper optimized the structure of a SACM p-n junction, improvedthe p-n structure of APD and the p-n junction depth and the reverse breakdown biasvoltage and current with Silvaco software. Achieved in a lower biased voltage triggeran avalanche.Finally, this paper optimized the thickness of the absorbing layer,calculationphoton detection efficiency of each layer, improvemed the quantum efficiency at1064nm.