Investigation Of Hybrid Integration Process And Performance Of Infrared Detector Based On PZT

PZT is a multifunctional material with significant application value. For theapplication of high-performance uncooled pyroelectric infrared detector, detectors basedon PZT show a great potential and exhibit a fabulous performance. However, in a largenumber of research reports, the preparation process of infrared detectors based on PZThas no combination with the mature silicon integrated process, and accordingly the massproduction is impossible. In recent years, infrared detectors prepared on the silicon chipbecomes a focused research target for experts from all over the world.This thesis mainly do research on the absorption layer and the preparation ofpyroelectric infrared detector based on PZT. Its main contents and results are as follows:1. The preparation process of black gold as the absorption layer is investigatedsystematically. Specifically, the preparation conditions, like the molybdenum boat, thesubstrate, the vacuum pump, the current, the distance between the target and the source,the mass of the evaporation source, the N₂atmosphere, are studied and analyzed. Theinfrared absorption performances of black gold prepared under the different conditions,like different masses of evaporation source and different N₂atmospheres, are tested andcontrasted. We conclude that the black gold layer prepared using0.3g Au granules underN₂atmosphere of3000pa has an excellent absorption performance, with almost noinfluence on the evaporation area and the thermal capacity, which meets the requirementof the absorption layers for infrared detectors. The method of fuming502glues intoblack gold is studied to solve the weak adhesion of black gold with the substrate. Afterthe test, we find that the502fuming has almost no impact on the absorptionperformance of black gold.2. We use bated PZT wafers with Cr/Au electrodes on both sides as the sensingelements of the infrared detectors. The problem of short circuit between the top and thebottom electrode is solved by plating black gold first. The viability of PI-PVDFdouble-layer as the heat-insulated layer is investigated. The structure of PI under PVDFsolves the problem of the weak adhesion between PVDF and the silicon chip, andPVDF makes up for the thickness and the unsmooth surface of PI. The thermal conductivity of the PI-PVDF layer is0.4⁰.45W/mk, tested by the3ω method.3. The preparation process of the heat-insulated layer structural detector isinvestigated, mainly using Au-In bonding technique and ultrasonic bonding technique.The detection rate peaks at2.2×10⁹cmHz^1/2W^-1at the modulation frequency of143.3Hz.Additionally, we mainly use wet etching process and laser etching process to fabricate amicro-bridge vacant structural detector. The detection rate reaches at a peak of1.9×10⁹cmHz^1/2W^-1at the modulation frequency of143.4Hz.