Design And Simulation Of Thyristor Based On TCAD

Since the launch of SCR in1957, the thyristor has experienced half a centuryof development. Its power capacity is more than3000times the initial, and with theturn-off thyristor developed successfully, it has overcome the ordinary thyristordefect, from the first half-controlled device into a full-controlled devices, thyristorhas achieved the turn-off capability after conduction.On the basis of making a research on the working principle of ordinarythyristor, this paper analyzed the gate turn-off thyristor and asymmetricgate-commutated thyristor conduction mechanism and turn-off mechanism, layingthe foundation for their optimize design. Then this paper discussed currentmainstream optimization methods, including the transparent anode structureparameters optimized, gate-cathode graphic design, and discussed some newstructural design are as well. After introducing TCAD operation process, this paperhas made simulation and optimization for the GCT and its derivative structure, anddrew some important conclusions. Including transparent anode structure parametersaffect asymmetric GCT-state characteristics is a transparent anode total amount ofimpurities, the GCT-state characteristics contrast between new structure of theanode short circuit GCT and asymmetric GCT, compared to the non-symmetricalGCT, the anode to short-circuit GCT manufacturing process is easier, but has aquite good performance as asymmetric GCT.Finally, a summary of research work is made in this paper and future work iselaborated, making my own contribution to the industrialization of the thyristor.