Modeling And Parameters Extraction Of Si-based On-chip Spiral Inductors For RFICs Design

With the rapid development of the information industry whose core is Integrated Circuit (IC), Radio Frequency Integrated Circuit (RFIC) based on silicon is in rapid development. It has the advantages of low cost, low power and wide application in System On Chip (SOC). As one of the core devices on the chip, on-chip spiral inductor has been widely used in various RF modules, such as Low Noise Amplifier (LNA), Power Amplifier (PA), a Voltage Controlled Oscillator (VCO), the impedance matching circuit, etc. The difficulty of designing an on-chip spiral inductor is how to fabricate the inductor in the smaller area, enhance higher quality factor, and work on higher frequency. The goals of optimizing the circuits are designing a high performance, low cost and low power consumption of on-chip spiral inductor.In chapter1, the background of on-chip spiral inductor and the present research situation are introduced, and the structure of thesis is briefly outlined.In chapter2, by using the electromagnetic simulation software (High Frequency Structure Simulator, HFSS), several spiral inductors based on0.18μm CMOS technology are designed. Through the Y parameter and the intrinsic circuit of the inductor, the intrinsic inductance and the spiral inductor quality factor are calculated. The effect of geometric parameters of on-chip spiral inductors on the performance is analyzed.In chapter3, three common used models of on-chip spiral inductor are introduced firstly, including the single π model, the double π model and the T model. And then an improved equivalent circuit model is proposed in this thesis. This model is based on the conventional single π model, taking into account the skin effect, the proximity effect and the pad parasitic effect. The de-embedding technique is based on the combination of OPEN and SHORT de-embedding test structures. Finally, the test data and extracted data are compared and analyzed, which has a good agreement. The proposed model is verified, and more precise than the traditional single π model.In chapter4, S parameter and Vector Network Analyzer (VNA) are introduced firstly. And then the test system platform is descripted in detail which includes VNA (Agilent8363C), the on-chip probe station (Cascade M150) and radio frequency cable. At last, the on-chip calibration is tested.