Applied Research On The Photovoltaic Effect Of Ferroelectric Film/electrode Heterojunction

Many scientific researchers always try their best to develop advanced technology ofsolar cell. In recent years, traditional solar cells of crystalline silicon have reached the limitof energy conversion efficiency because of the limit of material. While, solar cell based onthe ferroelectric thin film has attracted many researchers attention due to its low cost andunique photovoltaic effect.In this article, ferroelectric thin films were mainly prepared by sol-gel method. Here,photovoltaic effects of the remanent polarization and Schottky barrier at theferroelectric/electrode interface have been studied. Details are as follows:(1) Adjusting the different Ti material in the precursor solution to grope the optimalconditions of Nd-doped Bi4Ti3O12(BNT), thin films. In the process of preparing thin film,pyrolysis temperature and annealing temperature were regulated to get the bestferroelectric properties of BNT films, and then the photovoltaic effect was studied.(2) Combining two kinds of ferroelectric materials [Pb(Zr,Ti)TiO3(PZT) andBi4Ti3O12(BIT)], we found the improved ferroelectric and photoelectric performance byregulating the thickness of two kinds of thin film.(3) The ferroelectric thin film was introduced in traditional PN junction solar cells as abuffer layer to improve the photoelectric performance of crystalline silicon solar cells.Compared with bare PN junction, the photoelectric conversion efficiency with PZTpassivation was enhanced about6times.