The flexible cadmium telluride thin film solar cell is a IIB-VIA compound semiconductor thin-film solar cells, the theoretical efficiency is as high as28-29%, the thin film of CdS as a window material having high transmittance, excellent photoconductivity and appropriate Fermi level, it has great potentials study.The main research work which is the growth of CdS thin film window material on the flexible polyimide substrate. First, CdS thin films was sputtered with different sputtering pressure, substrate temperature, sputtering power, annealing temperature and time to study on the CdS films’morphology, crystal structure and optical properties; secondly, researched the effects of different growth conditions on the CdS thin films by chemical bath deposition; Finally, we use the the experimental parameters of CdS thin film derived from the magnetron sputtering to the preparation of the cell and the performance of test results are as follows:1. Through the test of CdS thin films prepared by magnetron sputtering obtained when the sputtering pressure is l.OPa, the substrate temperature is300℃and the sputtering power is35W, the surface morphology of CdS thin film is uniform, dense, the crystal grains developed fully and the average transmittance is73%, then annealed at380℃and lOmin, the the grain recrystallization, the membrane surface is more smooth, and at this point, every performance of CdS thin films in the best state.2. Through the analysis of the test CdS film prepared by chemical bath obtained when the concentration of CdSCO4is0.015mol/L, the concentration of SC(NH2)2is0.75mol/L, the concentration of ammonia is1.8mol/L, temperature of water bath is85℃, bath time is1Omin, the annealing time is10min and annealing temperature is380℃, the CdS films prepared by uniformly and no macroscopic defects and the average transmittance is50%.3. Combining magnetron sputtering optimal experimental parameters CdS thin films, and further completed the preparation of cell components, and finally got the flexible CdTe thin film solar cells with open circuit voltage was0.7548V, short-circuit current was0.0012A, a fill factor was55.3%and the conversion efficiency was6.5%. |