| On the background of the current global energy shortage, with the inherentadvantages of the energy-conservation and environment-protection, the new energy andmaterial industries have become the emerging research areas with widespread concernand more development, particularly in solar photovoltaic industry and nanotechnologyindustry. Emerging from the second and third generations thin film solar cell andsemiconductor nanomaterials, the series of chalcopyrite thin film material have ranked asone of the current hot energy material in the development of energy filed.Copper-Indium-Gallium-Sulfur quaternary compound, as a member of the chalcopyritesemiconductor materials, has drawn much attention due to its excellent properties. Furtherimprovement on the performance of these materials has become one of the mostimportant problems, using different approaches, such as the element-doping. In this thesis,we focus on the development of the preparation of Copper-Indium-Gallium-Sulfurquaternary thin film and the titanium doped Copper-Gallium-Sulfur ternary system toexplore the technology route on the large scale, high quality and new craft, which canprovide the basic experimental datas for the thin film solar cell devices. The major studiesand achieved experimental results are sumerized as follows:(1) We have successfully synthetized the quaternary Copper-Indium-Gallium-Sulfurthin films in different solution systems by the electrochemical deposition methodfollowed with the thermal treatment process.In the aqueous solution system, we have studied the effect of the different annealingtreatment temperatures on the growth of the quaternary Copper-Indium-Gallium-Sulfurthin film. We found that the better crystalline phase, crystallinity, compact and smoothsurface thin film which is suitable for the absorber layer for the solar cell can be obtainedat the optimum temperature of400℃. The conventional thin film solar cell device hasachieved the photoelectri conversion efficiency of5.75%.In the alcohol solution system, we have studied the effect of the different depositionpotentials on the growth of the quaternary Copper-Indium-Gallium-Sulfur thin film. Wefound that the better crystalline phase, crystallinity, compact and smooth surface thin filmwhich is suitable for the photochemical battery material can be obtained in the optimumcondition of high potential. We further found the better photoresponse performance canbe obtained on the high potential and the heterojunction structure through thephotochemical battery test. (2) We have successfully synthetized the quaternaryTitanium-Copper-Gallium-Sulfur thin film in alcohol solution system by theelectrochemical deposition method followed with the rapid thermal treatment process insulfur vapor. We chosed the rapid thermal treatment process standard as the10minute at500℃which can accelerate the nucleation process. We found that the better crystallinephase, crystallinity, compact and rough surface thin film which can increase the lightabsorption by the light trapping effect can be obtained. We have successfully synthetizedthe absorber layer material within the intermediate band gap theory model by introducingthe titanium element into the Copper-Gallium-Sulfur ternary structure and furtherachieved a better photoresponse performance through the heterojunction structure. |
