Design Of Gradient Doping A-Si:H/c-Si Heterojunction Solar Cell And Reseaches Of Behavioral Simulation

Under the current situation of energy crises and environment pollution issues, thesolar cell has obvious advantages. However, the cost and energy conversion efficiency ofsolar cell block its development. Due to the high energy conversion efficiency and lowcost properties, the amorphous silicon/silicon heterojunction has been widely studied inrecent years. This paper designed a heterojunction solar cell that gradient doping theoryhas been used in the a-Si:H(n) emission layer in order to improve the function of the cell.Some parameters that affect the properties of cell has been simulated by AFORS-HETsoftware. The main content of the paper are as follows:Firstly, a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(p+) heterojunction has been designed. Theperformance of the cell has been improved because of adding intrinsic layer and backsurface field in a-Si:H(n)/c-Si(p) cell. The thickness of relative layers, dosageconcentration, band gap width and density of interfacial states were simulated byAFORS-HET software, from where the optimal parameter values were fund. The bestperformance parameters were got from the silmulation results.Secondly, through the semiconductor, derived that gradient doping in exponentialform is conducive to the improvement of the solar cell performance. Then theAFORS-HET software was used to simulate how the doping gradient affect cellperformance, when the doping content in emission layer was constant; and the influenceof different doping content to the cell performance when doping gradient unchanged.Finally the mechanism that how gradient doping impact cell performance was studied.The simulation results of this paper have provided a certain basis to other cellresearch, has a certain theoretical and practical significance.