Fabrication Of ZnO Films And Properties Of Nitrogen Doped ZnO Films

Zinc oxide （ZnO） as new type of the third generation of wide-band-gap semiconductormaterial with the energy band gap of3.37eV and exciton bound for60meV, which makes it apromising candidate in the filed of short wavelength optoelectronic devices, such asultraviolet light emitting diode, lasing diode, detective device. So far, ZnO has become a newfocus in the field of short wavelength optical functional materials. As we know, both n-typeZnO and p-type ZnO material are also needed in the fabrication of ZnO based optoelectronicdevices, however, the preparation of high quality p-type ZnO film is still one of the maindifficulties in restricting its practicality in the field of optoelectronics. To solve this dilemma,we have tried to fabricate high quality intrinsic ZnO film and p-type ZnO films in this paper.The intrinsic ZnO films are grown by MOCVD on insulating Si（111） substrate. Then, westudy the influence of growth temperature on the structure, electrical and optical of theintrinsic ZnO films by the X-ray diffraction （XRD）, scanning electron microscope （SEM）,Hall effect testing （Hall） and low temperature photoluminescence （PL） measurements. At last,we get a optimized growth conditions of intrinsic ZnO film.Based on the optimized growth conditions of the intrinsic ZnO films, N₂is used as theN precursor of ZnO:N films, which is activated into plasma state by a radio frequencygenerator, and N-doped ZnO （ZnO:N）films are obtained by a low-pressure plasma assistMOCVD on insulating Si（111） substrate. Then, the influence of activating power on theproperties of ZnO films is studied by means of XRD, Hall, X-ray photoelectron spectroscopy（XPS） and the PL. At a result, P-type ZnO:N films with acceptable electrical and opticalproperties are achieved under the optimal activating power conditions, and according to theexperimental results, get a possible mechanism of nitrogen doped. ZnO films...