Preparation Of Graphene By Chemical Vapor Deposition

Graphene is a new carbon single quality, its structure is the two-dimensional honycomb lattice formed by six-membered rings of carbon, and it is only one carbon atomic layer thick. In this case, graphene is the first two-dimensional material on real significance. The unique structure of graphene makes it have some excellent physical and chemical properties, such as the extremely large strength, highly flexiblity, excellent electrical conductivity, large electron mobility and the relatively Young’s modulus, which make graphene a great value on the application of nano-electronic devices, superconducters, solar cells transparent electrodes and so on. However, the premise of this is the preparation of large-scale and high-quality graphene. Curtenly, there are already many preparing methods of graphene, but it is necessary to realize the large-scale, high-quality and controllabe growth of graphene in order to different applications. According to the comparison of several methods, we found that chemical vapor deposition (CVD) is the most likely to achieve this requirement.In this thesis, we growth graphene by chemical vapor deposition (CVD) on nickel substrate and copper substrate for using acetylene as the carbon source, and then research the advantages and disadvantages of growth on the two different substrates. Raman spectroscopy (RS) is used to characterize graphene samples. The experimental results show that the graphene quality on nickel substrate is better than that on the copper. According to analysis and disscuss the results combined with the growth mechanism of nickel and copper, we conclude that the graphene growth on nickel substrate is easy, but the quality is not too high; though the graphene quality is better on copper substrate, but the growthing conduction is too harsh and it is difficult to achieve.We also grow graphene by chemical vapor deposition for using acetylene as the carbon source and nickel foil as the subatrate to research the impact of the growth time on the quality of graphene. We obtain the two different graphene samples according to adjusting the growth time. Raman spectroscopy (RS) and Scanning electron microscope (SEM) are used to characterize graphene samples. After comparison of the two samples,we find that the2D and G peak integral intensity ratio (I2D/IG) will become smaller with the increase of the layer number; It is expected to prapare a large-area,high-quality and uniform distribution of graphene.