| With the increasing population and rapid development of society, thetraditional fossil fuels could hardly meet the growing demand for energybecause it is non-renewable as well as the pollution. As a kind of renewableand clean energy, solar cell has is highlighted in recent years. After abruptlydevelopment in recent years, Si-based solar cells dominates in PV marketand applied in people’s daily life. However, it is limited because its substratecould not bend. To find new application areas, we deposit micro-crystallinesilicon (μc-Si) thin film on polymer flexible substrate by hollow cathodeplasma enhanced chemical vapor deposition. We compare the properties ofμc-Si on three substrates: glass, Indium tin oxide (ITO) coating glass, ITOcoating polyimide (PI) and explore the influence of process parameterssuch as substrate temperature, working pressure, gas ratio, power densityon coating structure and properties. In addition, we also discuss the μc-Sigrowth kinetic. The possible growth mechanism is assumed. We obtian thefollowing results:(1) The process parameters dominate the growth of μc-Si film. Depositionrate of μc-Si film has a positive correlation with substrate temperature,working pressure, gas ratio, and power density. Whereas crystallinityrises up and then drops down with the increment of substrate temperature,gas ratio and power density.(2) Micro-hollow cathode discharge is a powerful plasma source for μc-Sideposition. Its high ionization rate makes it possible to prepare crystallinesilicon at low temperature such as90℃.(3) The growth status of μc-Si film depends on the substrate. The differentsubstrates has different crystallinity when the deposition conditions arefixed. Films on glass and ITO coating glass have the similar crystallinity,but it is lower on ITO coating PI substrate. (4) μc-Si film growth possibly needs three phase stages. On glass andglass+ITO substrate, we can easily prepare μc-Si film. Growthmechanism may follow Volmer-webe mode, one of the island growthmode. |
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