Investigation On Synthsis And Photoelectric Property Of Two Dimentional Gallium Telluride Semiconductor

Two-dimensional semiconductor materials with unique electrical, optical,magnetic and mechanical properties, so in the past few years have caused widespreadconcern in the relevant researchers. In addition to the graphene,2-D function ofsemiconductor materials is currently the most representative is molybdenum d isulfideand boron nitride, two-dimensional gallium family of materials in recent years hascaused wide attention of many researchers. III-VI layered compounds, such asgallium selenide, sulfide, gallium, indium selenide and two-dimensionalsemiconductor materials in photovoltaic devices, optoelectronic devices, nonlinearoptics and microelectronics and other fields have a very good application prospect.This article is in this context to the semiconductor gallium telluride two-dimensionalfunctional materials optical, electrical properties, in-depth research and analysis thegallium telluride application value in the field of electronic and optoelectronicdevices.Research results show that single crystal gallium telluride has a monoclinicstructure with space group C₂/m. But, a particle transition from the monoclinic to thehexagonal modification of gallium telluride was observed. The mobility ofmultiple-layer gallium telluride is5-8cm²/V.s, but the few-layer is0.2-1.2cm²/V.s.The on-off ratio of multiple-layer gallium telluride is about10, and few-layer is about102in room-temperature. The mobility increases with the temperature, but the on-offration decreases with the temperature increasing. The charge injection mechanism isdominated by thermal emission at high temperature, in addition, at low temperaturethe current-voltage characteristic show a transition from direct tunneling to F-Ntunneling.Silica/silicon as substrate of telluride gallium light detector the light responseunder UV irradiation and quantum efficiency under the condition of the bias is2V195A/W-1and105%, and the signal-to-noise ratio of up to1012, the response time ofup to78ms, and showed good stability. Under the condition of visible light responseand its light quantum efficiency under the condition of the bias is2V in10⁵0A/W-1and0.5¹.5×10⁴%, signal to noise ratio of up to1012. With polyethyleneterephthalate oxalic ester （PET） as the basement of the transparent flexible two-dimensional telluride gallium light detector performance also showed good lightdetection performance and stability. These results show that tellurium gallium is apotential optical detector, optical transistor material, but there are also someshortcomings.