Large Area Synthesis, Transfer Of Graphene And Study Of The Optoelectronic Detectors

Graphene is the thinnest new2D carbon material in the world. It is with thehigher carrier mobility, and its electron is with ballistic transport properties insubmicron scale. Besides, electronic transmission rate is fast at room temperature.These excellent properties mentioned above make it have a wide applicationprospect in the aspects of nanoscale electronic devices. But because that the largearea uniform preparation is difficult and the transfer process of graphene will dogreat damage to graphene and contamination easy to be introduced. These cause thegraphene industrial application encounter bottlenecks heavily. I systematicallystudied the growth mechanism of graphene and put forward some methods toimprove the quality of growth. Then the some optimization of transfer method wasalso carried out and presented and optimized a method for large area transferindependently. Research had laid the foundation for the industrial application ofgraphene. Results are as follows:1. In order to optimize of graphene growth conditions, I firstly made thegraphene can even grow in small areas, and then expanded to the area of growth.After adjusting the growth conditions, the graphene can grow to the size of A4. Amethod of the naked eye visual detection of graphene quality was found. Thismethod can be used to test graphene growth quality very intuitively in a minute.2. Through the improvement of the original transfer method, large areagraphene can be transferred to4inch silicon wafer. The impurities were introducedinto the graphene during the transfer process were easy to be removed. This madethe graphene move a big step forward in transfer of large area and high quality. Thetransfer of graphene using epoxy resin was put forward and the large area rapidtransfer was realized. Futhermore, patterning can be achieved by using a simplemethod.3. The graphene/silicon Schottky junction infrared detectors were constructed,which are tested at room temperature and low temperature respectively, the resultsshowing that the device can detect very weak light (50nW/cm2) at low temperature.