Low-cost Preparation Of One Dimensional Silicon Nanostructure And Properties

Currently, silicon remains the most important material for semiconductor industry, and one-dimensional (1D) silicon nanostructures have been well considered as promising building blocks for devices in the fields of nanoelectronics, opto-electronics, energy conversion, energy storage, and bio-and chemical sensors. Therefore, the preparation, characteristics and applications of1D silicon nanostructures, have attracted more and more attention in many fields. Metal assisted chemical etching (MaCE) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film, with the significant advantages of low cost, simple process, ability to control of orientation of silicon nanostructures, etc., all of which make itself be one of ideal technologies to fabricate1D silicon nanostructures. This dissertation focuses on the preparation of1D silicon nanostructures based MaCE method and their performance characterization. The main works are listed as followings:First, synthesis methods, characteristics and applications associated with silicon nanowire (SiNW) had been summarized.Second, the electron transport properties of1D SiNW had been simulated based on ATK/VNL simulation software. The key simulation points included the transmission spectra and Ⅰ-Ⅴ characteristics of SiNW-based two-probe system under different bias voltages, which provided a theoretical guidance for in-depth understanding of the electronic transport properties of SiNW.Third,1D silicon nanostructures had been prepared in the AgNO3/HF-based etching solution via MaCH method. By changing the preparation conditions (such as the etchant concentration, temperature, time), bundle SiNW arrays and1D porous silicon arrays had been prepared respectively, and the corresponding process and mechanism of1D SiNW formation were also analyzed.Fourth, the hydrophilic and hydrophobic property and Raman spectra of1D silicon nanostructures prepared via MaCH method were tested respectively. The result of contact angle showed that the hydrophobic property of silicon samples after being etched was enhanced dramatically, with the contact angle increment of63.5°; Raman spectra showed Raman peaks of silicon samples after being etched had an obvious red shift and asymmetric wide phenomenon, and the scattering intensity was significantly reduced.Fifth, the significant advantages of the SiNW field effect transistor (FET) used in biosensors were summarized. The biosensor based on SiNW-FET was designed and the fabrication processes of SiNW FET were also designed with MEMS/NEMS technologies.