Studies On Doping And Low-temperature Sintering Of PMS-PZT Ternary Piezoelectric Ceramics

In recent years, with the development of the electric apparatus of PZT,piezoelectric ceramics have been extensively used. The high power andminiaturization piezoelectric materials have become more important developmentalaspect in the practical application, such as piezoelectric ceramic transformer andultrasonic motor. PMS-PZT ternary system ceramic has good piezoelectric propertiesand sintering performance, In order to further improve its all aspects ofcomprehensive performance, we dope the Sr、Mn, optimize the preparation processand dope temperature sintering additive CuO, hope that it could satisfy therequirements in practical applications.Pb_1.04(Mn_1/3Sb_2/3)_0.05Zr_0.47Ti_0.48O₃+xwt%SrCO₃+ywt%MnO₂(x+y=0.3weresuccessfully prepared by the conventional mixed-oxide method. The influence ofdifferent Sr/Mn content to its performance was researched. We analysis the samplephase and surface microstructure by X-ray diffraction （XRD） and scanning electronmicroscope （SEM）, then we discuss its piezoelectric and dielectric properties. Wefound that we can get the best comprehensive properties of piezoelectric ceramicmaterial when calcined at900℃, sintered at1180℃and Sr/Mn=1/1: piezoelectriccoefficient d₃₃=320PC/N, mechanical quality factor Kp=0.56, dielectric losstanθ=0.32%, relative dielectric constant ε₃₃^T/ε₀=1519and electromechanical couplingcoefficient Qm=2080.We got the best formula in the last step, then we study the influence of preparationtechniques on the dielectric and piezoelectric properties, including the calcinationstemperature, molding pressure, polarization condition. The result shown that bestcalcinations temperature and the best molding pressure were900℃and300MParespectively, the best polarization electric field, polarization time and polarizationtemperature were3kv/mm,15min and130℃. The best comprehensive propertieswere d₃₃=315pC/N, Kp=0.58,ε₃₃^T/ε0=1570, tanδ=0.33%. B-pioneer body methodcould reduce the sintering temperature, but also will worsen piezoelectric ceramicelectrical performance.We doped CuO in the last formula in order to reduce the sintering temperature andinhibit the volatilization of PbO as far as possible. Because CuO and PbO can react toform eutectic mixture promoting the sintering process, so ceramics could bedensification at the early stage of sintering. We researched the influence of differentCuO content to the piezoelectric performance though the analysis of the microstructure and phase structure. The result shown that we could get the bestcomprehensive performance when doping0.1wt.%CuO, sintering at925℃. The bestproperties were d₃₃=289pC/N, Kp=0.56, ε₃₃^T/ε₀=1621, tanδ=4.1%, Tc=260℃.