Characterization Of InGaZnO Transparent Conductive Thin Films By PLD Method

In last ten years, the key technology of many kinds of photoelectric devices is improved rapidly, with comprehensive development of many research fields, such as solid physics, materials science, photoelectron technology, manufacturing technology and so on. As one kind of core materials, transparent conductive film has been paid much attention on its optical and electrical properties.In this paper, InGaZnO films were prepared by adjusting ZnO with In2O3and Ga2.0.3., with pulsed laser deposition (PLD) technique. Here, we changed the proportion of doping components and varied the deposition temperatures to investigate how these conditions have influences on films properties, especially on the optical properties in the mid-infrared band, for further understanding of properties of films in amorphous/crystalline state.First, we prepare the ZnO films doped with small amounts of In.2.0.3and Ga2O3and deposit films at different temperatures to investigate how the content of In and deposition temperatures have influences on films properties. This section discusse the influencing factors of infrared transparent conductive properties of InGaZnO films, including films structure, surface morphology, thickness and so on. The result shows that the films have polycrystalline structure; films deposited in room temperature have the lowest resistivity, betweem-10-2and-10-3Ω·cm; when doping ratio of In is3wt.%, films have the highest transmittance (80%), and the transmittance of films with other doping ratios is20%-70%.Then, we prepare the ZnO films doped with big amounts of In2O3and Ga2O3and deposit films at different temperaturesto investigate how the content of Ga and deposition temperatures have influences on films properties. Discussing the same as the first section, the results show that the films have amorphous structure; the films have good conductive performance, and resistivity is between-10-4and-10-1Ω·cm; all the samples have good mid-infrared transmittance(80%), and max transmittance is higher than85%; the hardness of films is about20GPa.