Font Size: a A A

Preparation Of Cu Bonding Layer On Porous Stainless Steel Substrate

Posted on:2013-08-30Degree:MasterType:Thesis
Country:ChinaCandidate:Y JiaFull Text:PDF
GTID:2251330374468436Subject:Food Engineering
Abstract/Summary:PDF Full Text Request
Porous metal-ceramic composite membrane has aroused extensive attention because it isconsidered to be one of the most excellent membrane materials. However, the commonlyutilized bonding methods are difficult to combine metals and ceramics effectively due to theirvery different performance. With conventional bonding methods, the obvious interface isusually formed, which significantly weaken the bonding strength between metals andceramics. The common bonding method used to the porous stainless steel and ceramic coatingis the interface modification. Copper, the main component of copper brazing filler metals, isan ideal material for bonding stainless steel and ceramics. This work focouses on using sol-gelderived copper layer by simulating copper brazing to bind the two matrials. Dopants of Ag、Ni、Si were introduced into the bonding layer. The preparation parameter of CuO sol, theaddition of Ag/Ni/Si, coating times, the change temperature of the protective atmosphere andthe sintering process of films which affect the membrane morphology were explored. Theconclusions are listed as follows:1. The optimal parameters for CuO sol was: with copper acetate as raw materials, theconcentration of sol solution as0.15mol/L, of which the isopropyl alcohol, ethanolamine andpolyethylene glycol to add ratio for16:1:1(v/v).2. The optimal concerntration of casting solution was0.024mol/L.3. The optimal parameters of Ag doped Cu bonding layer were listed as follows: thecontent of Ag and Cu was0.012:1(mol/mol); the coating times was1; the changetemperature of N2atmosphere was400°C; the highest sintering temperature was850°C.4. The optimal parameters of Ni doped Cu bonding layer were: the content of Ni and Cuwas2:1(mol/mol); the coating times was1; the change temperature was400°C with adelling period of2h, ventilate N2into the resistance furnace; the highest sintering temperaturewas850°C.5. The optimal technique parameters of of Si doped Cu bonding layer were listed asfollows: the content of Si and Cu was1:1(mol: mol); the coating times was1; the changetemperature of N2atmosphere was400°C; the sintering temperature was850°C.6. After sintering in hydrogen atmosphere, the film morphology changed little.
Keywords/Search Tags:membrane separation, porous metal membrane, sol-gel, copper brazing
PDF Full Text Request
Related items