Spin Rectification Enabled By Anomalous Hall Effect

In this thesis, we extended the spin rectification effect into in metal ferromagnetic Co9oZr10thin films based on anomalous Hall Effect (AHE), which is called AHE rectification. A systemic study of this effect showed that the out-of-plane component of dynamic magnetization and the rf current in ferromagnet could be rectified into dc hall voltage on the base of AHE. We also developed a novel method to electrically detect magnetization dynamics and measure the magnetic field vectors of microwave.1Put forward the spin rectification based on AHE (i.e., AHE rectification). The results of magnetization dynamics were conbined with AHE mechanism, which serve to solve the simultaneous equations of the experiential AHE formula and the LLG equation that used to describe dynamic magnetization. Then we developed the theory of AHE rectification. The theory result demonstated that the out-of-plane component of dynamic magnetization and the rf current in ferromagnet could be rectified into dc hall voltage. In the view of that the hall voltage originates from the interaction between microwave and dynamic magnetization, we proposed AHE rectification could be applied to study magnetization dynamics and detect the magnetic field voctors of microwave in material.2Test and verify the AHE rectification by using amorphous Co90Zr10thin films as experimental subjects in which the vectors of magnetic field also have be detected by AHE rectification method. Co90Zr10films have weak anisotropic magnetoresistance (AMR) effect. However, its obviously strong AHE make it the first choice to verify AHE rectification. The millimeter-level hall bar samples were prepared in clean room. We injected microwave current into Co9oZr10wire and acquired the dc hall voltage. The dependence of hall voltage on angle was study in order to obtain the angular resolved spin rectification spectrum. Not only did we verify the AHE rectification, but also we use it to locally detect field vectors of microwave.3Determine the dynamic magnetical parameters by applying the locally electrical detection method based on AHE rectification. We scaled the dependence of linewidth and Gilbert damping on film thickness through AHE rectification. The experimental results demonstrated that the zero-frequency linewidthâ–³H0has correlation to the film growth process in which the surface roughness of film principally influencesâ–³H0. The rougher that the surface is, the largerâ–³H0it owns. It is unusual that the damping increase with the film thickness, which results from the additional purity scattering when nano-Co particles appear in amorphous matrix during the films growth.