Charge Transport And Numerical Calculation Of Organic Semiconductor

During the research, improving photoelectric properties of device is always our destination, and key factor impacting properties of device is charge-carrier transport properties in organic semiconducting polymer. So it is important to research the charge-carrier transport properties in organic semiconducting polymerBased on dipolar disorder model, the physical mechanism of spatial correlations between different lattices in organic semiconductor was discovered, and after numerical computation, the correlation function of different lattices in simple cubic model and body-centered cubic model were obtained. For the purpose of obtaining the charge transport properties of organic semiconductor, based on correlated disorder model, from a numerical solution of the master equation for hopping transport in a disordered energy landscape with a gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field of correlated disorder model theoretically.Besides, using the Vissenberg-Matters model, the charge-transport properties of organic field-effect transistors with different thickness were studied. When satisfying the condition of temperature and gate bias, the dependence of source-drain current in a semi-infinitely thick organic semiconductor (3D) on thickness and gate bias was discussed. After simulating the ploy thienylene vivylene (PTV) field-effect transistors, it turns out that as the increase of the thickness of the organic layer, the current typically saturates which means the charge transport takes place almost in the few monolayers. For these transistors which can be considered as quasi two-dimensional, a new distribution of carrier-density different from the semi-infinitely thick organic semiconductor was introduced, and the dependence of source-drain current in a monolayer semiconductor (2D) on gate bias was obtained.