Organic Photoelectirc Devices Based On Re (Ⅰ) Complexes

During the21st century, people are paying more attention to the world’s energy supply.At present, we should urgently exploit a new kind of energy which is clean and reusable tosolve the contradiction between environmental pollution and energy supplyment. Due to thelow production cost and simple fabrication process for organic photoelectric devices, theyhave attracted many scientists’ attention. This thesis is based on the application of Re(I)complex phosphorescent materials on organic photovoltaic cells (OPVCs) and organiclight-emitting diodes (OLEDs), The specific work is as follows:1. Re-BCP, Re-Bphen, Re-APTT were synthesized by using BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen(bathoPhenanthroline), APTT(2,3-Acenaphthene-1,4,8,9-Tetraaza–triphenylene) as ligands;2. OPVCs based on Re-BCP as exciton blocking layers (EBL) were fabricated by theevaporating process in vacuum. The open circuit voltage (Voc) was0.425V. The short circuitcurrent density (Jsc) was5.38mA/cm2. The power conversion efficiency (PCE) was2%;3. OPVCs based on Re-BCP as middle layers were fabricated by the evaporating processin vacuum. The thickness of middle layers are1nm、3nm and5nm， respectively. With themiddle layer thickness increases， the efficiency of the devices showing the gradualdownward trend. The open circuit voltage (Voc) of standard device was0.43V. The shortcircuit current density (Jsc) was9.00mA/cm2. The power conversion efficiency (PCE) was1.16%;4. OPVCs based on Re-BCP as doping material were fabricated by the evaporatingprocess in vacuum. Re-BCP doped in donor (CuPc) and acceptor (C60). The concentration ofdoping material was10%、20%、30%in donor (CuPc), respectively. The efficiency of thedevice decreased with the increase of the doping concentration. And the concentration ofdoping material was10%、20%、30%in acceptor (C60), respectively. The efficiency of thedevice decreased with the increase of the doping concentration;5. OPVCs based on Re-Bphen as exciton blocking layers (EBLs) were fabricated by theevaporating process in vacuum. The open circuit voltage (Voc) was0.452V. The short circuit current density (Jsc) was7.48mA/cm2. The power conversion efficiency (PCE) was1.58%;6. OPVCs based on Re-Bphen as middle layers were fabricated by the evaporatingprocess in vacuum. The thickness of middle layers are1nm、3nm and5nm, respectively.With the middle layer thickness increasing, the efficiency of the devices show the gradualdownward trend;7. OPVCs based on Re-Bphen as doping material were fabricated by the evaporatingprocess in vacuum， The concentration of doping material was10%、20%and30%in donor(CuPc), respectively. The efficiency of the device decreased with the increase of the dopingconcentration；8. OLEDs based on Re-APTT as emitter material were fabricated by the evaporatingprocess in vacuum. The maximum brightness and current efficiency were4011cd/m2and1.17cd/A, respectively. Commission International De L′Eclairage (CIE) coordinates ofemission was (0.31,0.48). The threshold voltage was6V.