The Reaserch On Si-Based Integrated De-Multiplexing Receiver For Optical Communication

With the development of integrated circuits and integrated optics, the development of optoelectronic integration becomes the key topic of research. Si material is more popular in the photoelectric integrated research. However, not similar with Ⅲ-Ⅴ group compound material, Si material does not have superiority when we fabricate active devices which is used in the optical communication system. Therefore, it owns quite broad prospect to combine the superiority of Si material and Ⅲ-Ⅴ group compound to fabricate active devices. In addition, the wavelength-division-multiplexed (WDM) system became the dominant technology in optical networks for it can greatly expand the transmission capacity of a single fiber with low cost and simply structure. So it has a very important practical significance to fabricate de-multiplexing receiver which is used in wavelength-division-multiplexed (WDM) system.This thesis studies Si-based integrated de-multiplexing receiver which has flat-top and steep-edge spectral response. The main achievements are listed as follows:1. To combine the superiority of Si material in optoelectronic integration and the excellent characteristics of Ⅲ-Ⅴ group compound photodetector, wafer bonding technology was studied. The bonding process, which uses BCB polymer and adhesive AP3000to bonding Ⅲ-Ⅴ group compound photodetector epitaxial wafer on the Si wafer, was studied carefully.2. Distributed bragg reflector (DBR) and Fabry-Perot cavity were thoroughly analyzed by transfer matrix method. And then Multi-cavity cascade Fabry-Perot filter theory was stated by transfer matrix method. What’s more, three Si-based multi-cavity cascaded dielectric film Fabry-Perot filters were designed to receive the flat-top and steep-edge transmission spectrum.3. A Si-based photodetector was designed to obtain flat-top and steep-edge spectral response. This photodetector was discussed by transfer matrix method. The analysis result of the photodetector showed that the Si-based photodetector relatively high quantum efficiency and perfect flat-top and steep-edge spectral response. And this spectral response can meet the requirement of DWDM system.4. A Si-based photodetector, which has flat-top and steep-edge spectral response, has been successfully fabricated. The test result exhibit that peak quantum efficiency is56%and the-0.5dB,-3dB,-25dB bandwidth are0.61nm,0.69nm,1.16nm, respectively.