Preparation And The Optical Properties Of Ⅲ-Ⅴ(Gan) And Ⅱ-Ⅵ(ZnTe) Semiconductor

The III-V nitride materials (AlN, GaN, InN and their alloys) and Ⅱ-Ⅵ semiconductor represented by ZnO, ZnSe and ZnTe have seen rapid development in recent years. The III-V nitride materials can work under those conditions such as high temperature, acid, alkali and radialization due to their excellent photoelectric performance and stable chemical properties. Moreover, the direct energy gaps of these materials cover a wavelength range from the infrared (InN,-0.7eV) to the ultraviolet (AlN,～6.0eV). As a result, they have a wide range of applications in blue, green and ultraviolet optoelectronic device. As a wide band gap semiconductor material, ZnTe has a wide range of applications in the green optoelectronic devices and photovoltaic devices. It can be used as an excellent material of the green LED and a back contact layer of CdTe solar cells. Besides, ZnTe has become the most common and the most suitable for the generation and detection of terahertz radiation material due to its excellent phase matching characteristics,In this paper, we studied the structural and optical properties of GaN and ZnTe by use of the method of X-Ray Diffraction (XRD), Atomic Force Microscope (AFM), Scanning Electron Microscope (SEM), photoluminescence (PL) and Raman spectrum.The main research work and results are as follows:1. Investigate luminous mechanism of GaN epilayer by using of the PL spectral. And study the influence of electrochemical etching to the GaN epilayer. The results indicate that porous structure is a good method to relax the strain in the epilayer.2. Analysis the structural and optical properity of ZnTe bulk by XRD and PL spectra.3. Excitation power and temperature dependence of the PL spectra were studied. The peak energy redshifts and the linewidth remains a constant because of the stain in the heteroepitaxial layer.