Efficient S-band Gan The Design And Implementation Of Linear Power Amplifier

The power amplifier is a key component of the wireless communication system, Aerospace applications require high quality of the power amplifier, including the power consumption, linearity, volume, weight, anti-radiation and air sealing package. This paper focuses on the research and design of a S-band solid state amplifier module, the solid-state amplifier consists of a bandpass filter, enlarge temperature compensation network, analog predistorter, power amplifier circuit and isolator.The S-band solid state power amplifier have the target of high efficiency, when the output power is given, high efficiency means low power consumption. In order to achieve this design goal, we decide to use GaN amplifier chip, the silicon carbide (SiC) and gallium nitride (GaN) semiconductor technology gives a strong impetus to the design of high-efficiency power amplifier, the design finally used CGH40025made by CREE. The design of small volume analog predistortion circuit has been used to ensure the development objective of the high linearity of the S-band solid state amplifier. In this paper, LTCC and MCM are applied to achieve the circuit laminate integration design and MMIC chip solution to achieve miniaturization and light weight design goals. Finally realize the integrated design of the S-band solid state amplifier by rational layout and simulation.When amplifier was measured at last, the1dB compression point output power is23W, the gain is43dB when output power is23W, the efficiency of final amplifier tube is51%, the third-order intermodulation is-21dBc, the whole power consumption is53W; When the output power back3dB, third-order intermodulation becomes-42dBc. From the test results, the entire design meets the requirements.