The Design Of Structure Circuits And The Trinary Circuits Based On SET

With the continuous improvement of semiconductor integrated circuit, the application and development of traditional microelectronic devices have been blocked by the unprecedented. single electron transistor has not only typical of the quantum in nanometer scale, but also has high integration, low consumption, device running speed etc, and is likely to be a new type of integrated device structure. Therefore, the research of single electron transistor has become the hotspot in the field of the device recently.Based on the study of single electron transistor working principle, the model of single electron transistor on the basis of coulomb’s characteristic.This paper introduces the design of circuit based on single electron transistor at first. The design principle of inverter is analyzed on the basis of single electron transistor. After analyses the principle of the complementary inverter and MOS/SET inverter resistance inverter、current inverter and R-SET structure inverter are constructed. Then,after analyzing the working principle and performance of the inverter on the basis of R-SET structure, NOR、one-bit numerical comparator、SR latch and D flip-flop are constructed in the R-SET structure. Secondly, based on the deep analysis of single electron transistor structure and single electron transistor characteristic, a new type of asymmetric structure is brought out on the basis of single electron transistor.based on the asymmetric structure of single electron transistor, the asymmetric structure of NOR and NAND are constructed and the asymmetric structure general NOR-NAND circuit.The basic circuit and the combination of simple circuit are construced on the basis of the asymmetric structure and also the plip-flop are construced on the basis of the asymmetric structure. In addition, the three structure D flip-flop of the asymmetric structure, R-SET structure and complementary type SET are compared with the performance.Though the three structure comparison, the features and advantages are obtained on the basis of the asymmetric structure and R-SET structure.Finally, based on single electron transistor, the trinary lattice algebra completeness circuit of three value threshold circuit、AND gate and OR gate are construced and three value T gate and three value flip-flop of level triggered are designed based on the three value lattice algebra completeness circuit. Based on the coulomb stepped effect, three value inverter、three value AND gate and three value OR gate are construced at last. In the analysis process, the circuit was validated by using SPICE. At last the study showed that the circuit has advantages of simple in structure, low power, less propagation delay.