Research On The Correlation Between Electric Stress Damage Of Electronic Component Materials And Noise

In recent years, semiconductor devices and integrated circuits take on the tendency of high speed, high integration and low power. With the insulating layer of circuits becomes thinner and operating voltage of devices becomes lower, the resistance capability to overvoltage of devices and circuits becomes lower and they are very sensitive to EOS/ESD and time dependent current or voltage. These problems show a strong impact on the field of spaceflight and military. As the basic structure of integrated circuit, the quality of electronic components and its reliability in manufacturing, transportation, storage and usage is most important to circuits and electronic system. The affect that comes from electric stress plays an important role in reliability of electronic components materials, so the correlative research becomes urgent. The noise theory on electronic components shows that low frequency noise is much sensitive to the defects and damage in electronic components or materials, so it can be a characterize tool of quality and reliability of device.Based on summarizing the types and damage of electric stress, electrostatic discharge damage was considered as the main factor which results in the failure of devices. In this paper, electronic components were classified to different structure by the electrostatic discharge susceptibility firstly and then the study of current conditions of each structure was analyzed. Schottky barrier diode(SBD) is an important part of DC/DC power, and its degradation could cause the failure of DC/DC. Consequently, an experiment research program for the SBD was designed out. The different Electrostatic Discharge(ESD) injected times with the same voltage peaks were applied to the cathode and anode separately. The effect of ESD on the Ⅰ-Ⅴ and low frequency noise of SBD was discussed and the sensitive noise parameter was extracted. In addition, an experiment on low frequency noise test about the radio and microwave components was done. Stress damage of the devices, which were subjected to ESD, failure and problem and constituted by circuits were analyzed by noise spectrum and parameter. The sensitive noise parameter was extracted at last.