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Device Saturation Current Uniformity Research In Advanced Technology

Posted on:2014-02-14Degree:MasterType:Thesis
Country:ChinaCandidate:C F FanFull Text:PDF
GTID:2248330392461485Subject:IC Engineering
Abstract/Summary:PDF Full Text Request
With the continuous development of the semiconductor devicetechnology, in addition to a number of device performance and reliabilityconsiderations, the stability of the operating current t become a factor thatcan not be ignored. With the continuous reduction of the size of the device,the manufacturing process itself brought some error on device, so in theadvanced manufacturing technology, the limited requirements of customersoperating current increasing proportion of high to45nm node, the currentstability of the device has become one of the most important factor.IC process in integrated circuit manufacturing process technology error,resulting in the design was supposed to be exactly the same device will see abig difference in the actual test, the paper manufacturing process of eachaspects of optimization, making significant improvement in the stability ofthe operating current of the final device. The first chapter describes thedevelopment of CMOS mileage, trends and challenges facing thedevelopment of; The second chapter describes the immersion machine dosemap that comes with Poly lithography on a wafer per chip use of differentenergy, in order to compensate for the differences that exist betweendifferent chip CD, and thus ultimately to improve the device in a wafer inthe current stability; through the use of nitrogen and carbon ion implantationto suppress injected ion the diffusion heat treatment, and ultimately toimprove the stability of the device operating current results; the fourthlow-temperature ion implantation process to reduce the temperature of theion implantation to increase the thickness of the amorphous layer and reducethe amorphization ion implantation damage to the wafer surface, therebyimproving the uniformity of the lightly doped injection, ultimatelyimproving the stability of the device operating current; Chapter to furtherexplore the current instability in advanced technology, mainly for themechanism and random ion fluctuations in advanced technology to make reasonable assumptions and verification; last Chapter VI for the full-textsummary.
Keywords/Search Tags:Idsat uniformity, dose map, N&C Co-IMP, coldimplantation, random dopant fluctuation
PDF Full Text Request
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