Algan/gan Hemt Devices Characteristic Simulation

In recent years, with the rapid development of the semiconductor technology, traditional Materials such as Si and GaAs that provide a performance which is very close to the capacity, can not satisfy the applying requirement of semiconductor. With the advantage both in materials and electrical properties, Microwave Device of the new3rd wide band-gap semiconductor materials such as GaN、AlGaN and SiC can break through the limit,to a level which performance criteria is hard for traditional semiconductors to reach.For this reason, the new3rd semiconductor material AlGaN/GaN HEMTs has become a research focus recently because of the excellent applications for research.Based on the full understanding of development Situation and operating principle of AlGaN/GaN HEMTs, this dissertation establish a construction model and do with the model by giving the simulation and emulation of the device’s electrical properties. The major tasks in this paper include:1.Do research about performance and operating principle of HEMT, and get the electrical property parameters of materials such as GaN and so on.2.Briefly presents a theory about the semiconductor device which is the basis of variety device characteristics.and give an introduction of structure and operating principle. The characteristics.of HEMT such as Output charcteristic and Transfer characteristic is introduced in detail which are important in device application.3.This article introduces the usage of this software Silvaco which in detail contains the introduction of basic model such as mobility model、carrier generation and recombination model、collision ionization model、drifting and diffusion model and material model when simulating is needed such as forbidden bandwidth、dieleltric constant、active mass of carrier、effective density of state、space charge、Selfheating effect.Then analyze the reason for Polarization effect such as the occur of Spontaneous polarization effect and Piezoelectric polarization effect. The relevant reasons of the2DEG and its influence on the device charcteristic is given.At last,describe the basic structure of the device HEMT.4.Combining characteristic of parameters, using software Silvaco to establish and design simple models, the author analyzes and simulates in detail to the models for its carrier concentration、Transfer characteristic and Output charcteristics. The comparison between simulation result and experiment structure has been made and the result of the deviation given full explanation.