| ZnO is wide band gap semiconductor material of the II-VI semiconductor group. ZnOhas a large direct band gap of3.37eV at room temperature. ZnO also has a large excitonbinding energy which is around60meV. The applications of ZnO are numerous. ZnO canbe used for producing photoelectric device, surface acoustic device, solar power electrodeand gas sensitive device etc. As the application of semiconductor light emitting device inindustry and daily life is growing, research on ZnO material is also deepening. Nano ZnOas a Nano material has many unique properties such as ultraviolet luminescence. Peopleare paying close attention on its growing method.Electrochemical method has high sedimentary speed, can grow materials in lowtemperature. It also has the advantage of grow materials on complex substrate surface.Electrochemical method is widely researched in material synthesis field.We used monocrystal silicon as substrate, zinc acetate and hexamethylene teramineas electrolytic solution and uECS electrochemical system to grow pure ZnO Nano material.Added manganese acetate and cobaltous acetate in the electrolytic solution to produceMn doped ZnO Nano material and Co doped ZnO Nano material. Characterized sample’smorphology, structure and luminescence with SEM, XRD, PL. In the study of doped ZnO,by changing transition metal doping concentration, tried to find Mn and Co’s optimaldoping ration respectively. Result shows material grew in the experiment was ZnOnanorods, Mn2+and Co2+ions were successfully doped in ZnO crystal lattice, two ends ofthe nanorod were hexagon shaped. Compare to pure Nano ZnO, Mn doped and Codoped ZnO have better luminescence characteristic. In both samples, peak in ultravioletregion was enhanced and peak in blue region was restrained. Also used first principle toanalyze defect Mn doped ZnO nano material. Used wurtzite ZnO supercell model toanalyze the possible defect in Mn doped ZnO nano structure. Tried to analyzed electronicproperties of Mn doped ZnO. |
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