Pressureless Infiltration Process Optimization And Stereotypes For β-SiC_p/Al Applied To Electronic Packaging

With the rapid development of integrated circuits, the density of electronic packaging increase quickly, which result in the high demand to the material. Aluminum is selected for the preparation of composite for electronic package substrate because its excellent properties such as low density, high thermal conductivity, low price and easy processing characteristics, and composite with SiC particle, to overcome their own shortcomings and showed high thermal conductivity, low thermal expansion, high modulus, low density and excellent comprehensive performance, therefore, β-SiCp/Al enjoys great potential of application in the realm of electronic packaging.Nowadays, seeking for low cost manufacture processes for SiC/Al composites have attracted considerable attention from material researchers.β-SiC was used in prepare SiCp/Al composites, only our topic-based group to carry out research in this area, the previous focused on properties of β-SiC particle with high volume fraction Electronic packaging materials fabricated by pressureless infiltration in air, in this paper, First of all, β-SiC perform fabricated by dry-pressing moiling, and the effect of particle size、moiling pressure and pore-create agent addition on the properties of perform, then the optimal molding process parameters determined. The ingredient of alloy element added into Al and different particle proportion were optimized to improve the properties of β-SiCp/Al composites.Then, infiltration temperature and time on the quality of the impact of infiltration were discussed. After the optimization of pressureless infiltration in air, the optimum pressureless infiltration process parameters were determined.The main results obtained are:1.Under80MPa molding pressure, and added adhesive with polyvinyl alcohol (PVA) added as β-SiC quality of3-5%,β-SiC perform has good properties.2.The optimal value of Mg content is9%.The optimal value of Si content is10%.3.When particle size of5μm and46μm was selected, the particle volume fraction of the β-SiCp/Al electronic packaging will be fluctuating at the range51%～72%with the different particle proportion. And the coefficient of thermal expansion and thermal conductivity of β-SiCp/Al electronic packaging with double grain than which prepared with single size grain. SiC volume ratio can reach maximum of72%at the3:1of the mass of coarse grains and fine grains.4.There were some optimized parameters as follows:before infiltration SiC perform must be preheated to720℃, Al-9Mg-10Si aluminum alloy、1050℃infiltration temperature、2h holding time and the β-SiCp/Al composite fully densified without excessively interface reaction.5.Under the conditions of the optimized process parameters, the β-SiCp/Al composites were fabricated by pressureless infiltration in air used double grain, which TC is182W·m-1,K-1,CTE is6.4×10-6-1.Obviously,it can reach the demand of the packaging of high-power electronic apparatus of latest generation.