Zinc Base Transparent Conductive Oxide Thin Film Preparation And Performance Of The Research

Transparent conductive oxide films(TCO), with good electrical conductivity and high transmittance in the visible-near infrared, have been widely used in transparent electrodes, electromagnetic shielding, heat mirrors, electrochromic color windows, gas sensors, infrared stealth materials, flexible electronic devices and other areas. At present, most of commercial use of TCO material are ITO(ln2O3:Sn) films. The technology has matured, but there are still many shortcomings. Zinc oxide is a wide band gap semiconductor material, with low price, non-toxic, non-polluting, environmentally compatible, suitable for the production of large area, easy doping and the stability in hydrogen plasma better than ITO films, etc. Therefore, ZnO-based transparent conductive film is most likely to replace the ITO film.However, through literature research, we found that there are a lot of basic research or technical bottlenecks of ZnO-based materials need to be improved and breakthroughs. In order to solve these problems, we earried out the research from the following two aspects:(1) we prepared high valence state of tungsten-doped and cation-anion(F-Al) double-doped of ZnO films by sol-gel.(2) Using homemade zinc-aluminum alloy as the target, we deposited Al-doped of ZnO films by DC magnetron sputtering.We prepared high valence state of tungsten-doped of ZnO films by sol-gel.The results suggested that:with doping W, the crystalline quality of ZnO thin films was improved and the peak position of the ZnO(002) was shifted to the shorter diffraction angles. The optical band edge of W-doped films had red-shift. The variation of W-dopant concentration was directly influenced the photoluminescence intensity, however, it didn’t change the photoluminescence emission peak position.We prepared F-Al co-doped of ZnO films by sol-gel. The results suggested that:in F-Al co-doped ZnO thin films XRD patterns, beside the ZnO(002) diffraction peak, the ZnF2(110) diffraction peak at round26°(20) was also detected with the increase of F dopant concentration in the ZnO thin films. Compared to the undoped film, the Al-doped optical band edge had blue-shift With the doping of F, the optical band edge had red-shift. The photoluminescence (PL) intensity of Al-doped ZnO thin films was enhanced compared to that of undoped film, while it showed decrease with the doping of F in the films.We deposited Al-doped of ZnO TCO films by DC magnetron sputtering. The results suggested that:the partial pressure of oxygen, substrate temperature, deposition time could affect the structure and photoelectric performance of ZAO thin films. The best preparation process we have obtained was:the partial pressure of oxygen5%, the substrate temperature400℃,the deposition time30min. The average transimittance of sample was85%. The resistance of sample was80Ω/□.The results of this paper provide theory and experimental evidence for improving the structure and photoelectric performance of ZnO thin films. Meanwhile, it provide important reference value of theoretical basis and experimental methods for the prepartion of ZnO-based transparent conductive films and development of ZnO thin-film photovoltaic devices.