| In this paper, ITO and GZO films were prepared on PET and glass substrates byemploying D.C. and A.C. magnetron sputtering technologies with different depositionconditions. Their structural, mechanical, optical and electrical properties weremeasured by X-ray diffraction （XRD）, stylus profiler, UV-Vis-NIR spectrophotometer,FT-IR spectrometer and Hall Effect measurement, respectively. In addition, theinfluence of different process conditions on ITO, GZO film properties were studies.The major work includes:Firstly, the influence of different process conditions on the properties of ITO thinfilms was discussed.（1） With sputtering pressure increasing, film resistivity increasesand the minimum resistivity2.510-4.cm is obtained. The results shows thecrystalline quality gets worse while defects density increases apparently, theoreticalmodel implying filling factor decreasing.（2） With sputtering time increasing, the filmthickness increases linearly and all ITO films display amorphous property. Theresistivity and mobility decreases apparently, the minimum resistivity710-3.cmobtained when film thickness is1.3198m. In visible light range, the transmittancedecreases and absorption increases slightly while in infrared light range, thetransmittance decreases apparently.（3） With sputtering power increasing, the filmthickness increases. XRD patterns display the transition from amorphous structure tocrystalline structure, the major diffraction peak corresponding to （400） direction. Theresistivity decreases apparently and the minimum resistivity1.2×10-3.cm is obtained.In visible light range, the transmittance decreases obviously.Secondly, the influence of different buffer layer process conditions on theproperties of ITO thin films was discussed.（1） With oxygen partial pressure of Al2O3buffer layer increasing,（222） diffraction peak of ITO films gets stronger and FWHMincreases. The resistivity decreases with oxygen/argon ratio reaching2%, then nochange is observed. In visible light range, the transmittance increases firstly thendecreases. The emissivity in infrared light range firstly decreases then increases,implying some relationship with sheet resistance.（2） With the thickness of Al2O3 buffer layer increasing, ITO shows the transition from amorphous structure tocrystalline structure, and the major diffraction peak varies from （400） to （222）. Theresistivity firstly decreases, and then slight increase is observed when buffer layerthickness is37.5nm, finally the resistivity decreases again. The minimum resistivity3.53×10-4.cm is obtained when buffer layer thickness is75nm. In visible light range,the average transmittance keeps constant.Thirdly, the influence of different process conditions on the properties of GZOthin films was discussed.（1） With sputtering time increasing, the film thicknessincreases but the sputtering rate varies. XRD patterns show all the films are crystallinestructure and the major diffraction peak varies from （002） to （101）. The minimumresistivity is2.74×10-3.cm. Though the resistivity increases monotonously, the carrierdensity and mobility varies slightly, and the minimum mobility corresponding to filmthickness810nm is5.91cm2V-1s-1. The electron effective mass is achieved throughreflectivity spectrum，and the variation law is quite opposite to the mobility. Throughthe classic collision model of metal, the relaxation time0.11±0.01s is obtained. Invisible and NIR light range, the transmittance spectrum does not show obviousvariation, but the band gap obtained varies related to carrier density and mobility,which could be interpreted through Burstein-Moss relation.（2） With sputtering powerincreasing, the crystalline quality of GZO films improves apparently, and meanwhilethe major diffraction peak varies from （002） to （101）. SEM result shows the grain sizeincreases and the surface flatness gets worse severely. Firstly the resistivity decreasesapparently, and then slight increase is observed when the sputtering power is336W.The minimum resistivity achieved is2.8110-3.cm. The carrier density increasesfirstly and then decreases, which is the same to the variation law of mobility. In visiblelight range, the transmittance increases firstly, and then slight decrease is observed. Butin NIR light range, the variation amplitude is huge, and the mean minimumtransmittance is obtained when the sputtering power is274W. |
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