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Bifeo < Sub > 3 < / Sub > Film Of Sol - Gel Preparation And Optical Properties Of The Research

Posted on:2013-07-31Degree:MasterType:Thesis
Country:ChinaCandidate:H ZhangFull Text:PDF
GTID:2240330374977017Subject:Theoretical Physics
Abstract/Summary:PDF Full Text Request
Magneto-electric materials shows coexistent ferroelectric orderand magnetic order. There are few ferroelectromagnetic materials withexistence of antiferromagnetism and ferroelectricity simultaneously atroom temperature,and BiFeO3is one of them. BiFeO3has ferroelectricproperties with Neel temperature (TN=643K) and antiferromagnetismwith curie temperature (TC=1103K).In this thesis,BiFeO3powders were prepared by Solid State Reactionand BiFeO3thin films were prepared on ITO/glass substrate by sol-gelmethod in this paper. And we studied there properties. The maincontents of this paper listed as followed:1.BiFeO3powders were prepared by Solid State Reaction. And weinvestigate the microstructure and ferromagnetic properties of theBiFeO3powders;2.BiFeO3thin films were prepared on ITO/glass substrate by sol-gelmethod. And we studied the influence of different temperature on theoptical and photoluminescence properties of BiFeO3thin films. Themain results are:(1)XRD results confirm that the polycrystalline BiFeO3thin films haveno impurity phases such as Bi2Fe4O9.And the BiFeO3thin films are wellcrystallized, showing smooth, uniform and crack-free surfacemorphology with well-distributed fine grains.(2)Crystallized BiFeO3thin films annealed at600℃exhibit (110)preferential orientation;(3)Optical band-gap of2.75eV and2.71eV was confirmed forBiFeO3thin films annealed at500℃and600℃, respectively. The shift ofband-gap was discussed in term of coarsening grain sizes as well as theexistence of amorphous phases in the films;(4)Three emission peaks were identified at462.5nm,473.7nm, 499.1nm and they arise from the electron transition from valence bandto conduction band, the Bi3+ related emission and the oxygenvacancies related emission respectively.
Keywords/Search Tags:ferroelectrol materials, BiFeO3thin films, sol-gel method, photoluminescence properties
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