| At present, in order to resolve the serious problems of energy and environmental, the best way is to research and development the high efficiency, low cost solar cells to make the best use of the solar energy resources. Solar cells based on organic-inorganic hybrid thin film have attracted a great deal of attention, due to it not only has the high electron mobility, good chemical and structural stability of inorganic semiconductor material, but also to retain the good flexible and machinable of polymer material. As a result, some inorganic compound materials attracted the interest of researchers, which have photovoltaic performance, non-toxic and environmental friendly. Because of the excellent performance of SnS and SnO2, they are seen as the absorbing materia and very promising window layer of solar cells, respectively. So the preparation and photoelectric properties of tin-based sulfide/oxide thin film were studied in this paper. The main results in our work are summarized as follows:(1) The In-situ preparation and photovoltaic properties of nanostructures SnS thin film. We selected the metallic simple substance of tin and sulfur powder as reactants, without any surfactant, utilized a hydrothermal method at180℃for24h to synthesize the SnS films on ITO glass substrates directly. The film was composed of nanoplates with thickness of70nm. Different reaction conditions of the SnS film preparation were discussed, furthermore, growth mechanism and photovoltaic performance of SnS film were studied. At present, we obtained the conversion efficiency of0.0012%, which indicated that SnS have obvious photovoltaic properties.(2) The In-situ preparation and photovoltaic properties of nanostructures SnO2thin film. We choosed the elemental form of reactants, utilized a facile hydrothermal method at160℃for24h to fabricate SnO2films on ITO glass substrates directly. SnO2film could be attached to ITO glass substrates tightly and composed of uniform nanoparticles with size of30nm. Then, we assembled a new structure hybrid film solar cells devices of ITO/SnO2/P3HT/Al for the first time, and obtained the performance parameters of an optimal device:an open-circuit voltage of0.296V, a short circuit of0.0180mA/cm2, a fill factor of22.2%, and energy conversion efficiency of0.0012%.In addition, to regulate the morphology of SnO2thin film, we employed the SnS nanoplates thin film as template, prepared the SnO2thin film successfully through morphology transfer from the SnS thin film. We discussed preliminarily the various factors that influencing the performance of solar cell device, the optimal process parameters were determined:The first step reaction at180℃for18h in20mL mixed solvent of DMF and absolute ethyl alcohol volume ratio is1:1; The second step reaction at140℃for24h in distilled water. The assembled devices were heated at80℃for2h in vacuum. The better performance parameters were obtained:an open-circuit voltage of0.405V, a short circuit of0.321mA/cm2, a fill factor of15.5%, and energy conversion efficiency of0.020%.(3) A preliminary research of SnO2/SnO hybrid thin film. Use the solvothermal method to synthesize SnO film on the substrate, then the SnO2/SnO hybrid thin film is obtained via calcining the SnO thin film. This method is simple, and the experiment process is environmental friendly. |
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