Detection Of Characterizations And Determination Of Lifetime In Crystalline Silicon Solar Cells From Electroluminescence Technique

Solar cells and modules have been paid extensive attention around theworld. Solar cell industry is at rapid development and crystalline silicon solarcell occupies the most market of commercial solar cells. While theimprovement of technology and production, the quality requirementfor solarcells and modules becomes higher, the defects in solar cells become morecomplex, and the influence to PV products becomes larger. Hence detectionand measurement of solar cells characterizations are of very importance.This paper focuses on the use of electroluminescence (EL) detection incrystalline silicon solar cell defects and properties as well as on the use ofmeasurement of crystal silicon solar cell lifetime using EL technique. UsingEL technique, we can detect the defects such as cracks, off-grid, black slice,sintering pollution and techniques pollution. EL detection of the solar cellmodules can also identify the problems of component solder, short circuitand non-equal solar cells. Base on the defect detection of the traditionalcrystalline silicon solar cells, the detection of P ink printing SE solar cellsare discussed and analyzed combined with a variety of detection methods.Through the detection we can prove SE solar cells can improve the short-wave response, reduce the grid contact resistance, improve the shortcircuit current and voltage so as to improve the efficiency of solar cells,also verified the accuracy of using EL technique to detect the defects ofsolar cells.Also, we discuss the EL quantitative measurement of crystalline siliconsolar cell characterizations. Through theoretical derivation and calculationwe get the relationship between crystalline silicon solar cell EL intensityand lifetime, discuss the influence factors of crystalline silicon solar cellelectroluminescence. Combined with the experimental data using method,we compare a series of solar cell’s performance parameters to the ELintensity, research the determination of crystal silicon solar cells minoritycarrier lifetime using EL method and the experiments are carried out toverify the technique. The experiment proves that this method can beeffective for the determination of crystalline silicon solar cell lifetime withhigh accuracy, and the measurement time shortens greatly which can getnumerical value of solar cell lifetime less than10seconds. We can also usethis method to the determination the crystal silicon solar cell lifetimedistribution and measure the minority carrier lifetime value of any point andregion of a solar cell. Contrast to the current widespread used method（μ-PCD）, this method can quickly, steadily and accurately measure crystalsilicon solar cell lifetime, be suitable for mass production needs and havelarge promotion value. The significance of this paper is to put forward a method of rapiddetermination of crystal silicon solar cell lifetime, and the testing time isreduced to less than10seconds, for the current sampling test method, can beapplied to the industrialized production, and realize the on-line test to everycell. There will be a very large display significance and application prospectsto the photovoltaic industry.This work is supported by the National Basic Research Program of China（2012CB934302）.