Preparation And Characterization Of CIGS Thin Film Solar Cell Materials

Solar energy is the energy emitted by the sun in the form of electromagnetic radiation to space,and most stable source of energy for environmental protection is irreplaceable features. Utilization ofsolar energy the most important way is for photovoltaic solar energy directly into electricity, but also theutilization of solar energy one of the most important area of research in the study. Able to quantify thecombustion of fossil fuels, the environmental pollution, global warming, the human health and otherhidden costs, solar power is one of the most economical methods.Recently, state-of-the-art CIGS thin film solar cell with an active area of0.5cm^-2exhibitedthe highest efficiency of20.3%[1]. The commercial use of copper indium gallium selenide thin-filmsolar cell module conversion efficiency of15.7%, which is remarkably higher than either CdTe or a-Sibased devices. Among these materials investigated for photovoltaic applications, CIGS thin film solarcells due to its high conversion efficiency, low production costs, stable performance, CIGS is one of themost promising candidates for the development of low-cost thin film solar cells, CIGS opticalabsorption coefficient of up to10⁵cm^-1, the highest so far reported in the semiconductor opticalabsorption coefficient. With such a high absorption coefficient, and conducive to the absorption ofphotons of solar cell base region and the minority carrier collection, namely, the thickness of theabsorbing layer as long as1²Î¼m to meet the requirement, so that you can reduce the consumption ofexpensive raw materials. CIGS thin film as the absorber layer is the most important key component inthe CIGS polycrystalline thin film solar cells. Preparation of high efficiency solar cells, CIGS thin filmshould deviate from the material stoichiometry small, with a single chalcopyrite structure, goodcompactness and larger grain. With a molecular structure and coordinating ability similar toethylenediamine （C2H8N2）, C6H18N4greatly increases the utility of chelating amine solvent use in thepreparation as well as its scale up potential. Triethylenetetramine as the solvent through the liquidmethod CIGS nano-materials, including nanoparticles of CIGS, CIGS thin film, and CIGS nanotubes,and TEM, HRTEM, SEM, XRD, EDS, and XPS characterization means that the prepared nanomaterialsare indeed our target product, And IV and surface photovoltage characterization methods tocharacterize the electrical properties of the material and optical properties. Through these means of characterization of the preliminary determination of the physical and chemical properties of the material,the material can be a good prospect of application in the field of photovoltaic.Triethylenetetramine using as a solvent, is also a reducing agent, acetylacetone salt and Sepowder reactants, reflux under air, liquid Monodispersed CuIn_xGa_1-xSe₂nanoparticles. This method isalso for the preparation of CIGS nanoparticles and cheap preparation of CIGS thin film solar cells toprovide new ideas, in order to speed up the market for CIGS polycrystalline thin film solar cells.Triethylenetetramine was a solvent, is also a reducing agent to the reaction of acetylacetone salt and Sepowder material, the preparation of CIGS precursor solution, and then drops applied to the FTO on heattreatment, the CIGS thin film. The method is simple and can be prepared by a large area CIGS thin film,while not subject to the restrictions of the basement topography. Do not require Se process, to avoid theuse of highly toxic H₂Se, while simplifying the experimental process. The same time, this method doesnot require the high cost of vacuum equipment and energy consumption, the preparation of low price ofthe CIGS polycrystalline thin film solar cells provide new minds, in order to speed up the market forCIGS polycrystalline thin film solar cells. Triethylenetetramine was a solvent, is also a reducing agent,acetylacetone salt and Se powder reactants AAO hard template in the air, wet chemical prepared bysingle-crystal CIGS nanotubes. Do not require Se process, to avoid the use of highly toxic H₂Se, whilesimplifying the experimental process. We use were characterized by XRD, SEM, TEM and EDSanalysis on the sample, the single crystal CIGS nanotubes.