| CIGS thin film solar cells is considered to be the most promising new energy. due to itslow cost, stable performance, strong anti-radiation, high photoelectric conversion efficiency,How to reduce the cost of production and improve battery conversion efficiency have becomethe focus of research. The study found that the efficiency of CIGS cells are mostly to add abuffer layer between the window layer and absorber layer. Now the most used buffer layer ofCdS thin films.CdS thin films were prepared by chemical-bath deposition (CBD) onto common glasssubstrates. CdS thin films were annealed at different annealing temperatures. Scanningelectron microscopy (SEM), transmission electron microscopy (TEM), energy dispersivespectroscopy (EDS), X-ray diffraction (XRD), spectrophotometer, X-ray photoelectronspectroscopy (XPS), were used to characterize their properties. which obtained by differentprocess conditions.The films had poor uniformity and covered by relative large particles when thedeposition temperature was low., The film surface is dense and uniform when the temperatureat80℃. The degree of crystallinity of the film with the water bath temperature enhance thepreferred orientation of the film is obvious. because the sparse surface of CdS thin filmsdeposited at low temperatures and therefore have a higher transmittance.The particles of surface on CdS thin film grown up obviously after annealing. becomemore dense. The films had poor uniformity and covered by relative large particles. There isobvious diffraction peak after450°C annealing. It increased obviously as annealingtemperature increases. half-wave diffraction peak smaller, larger particle size of cubicpolycrystalline structure. The optical properties significantly of CdS thin films improved,oxygen content has changed little and sulfur content less after annealing.Thiourea concentration has little impact on the surface morphology of CdS thin filmsThere is (111) diffraction peak at2θ=26.5°when thiourea concentration is20mM,.Transmittance becomes above70%with the increase of the concentration thiourea, we werenot obtained CdS thin film with no ammonium acetate. The peak is very sharp, half-peakwidth is very narrow when ammonium acetate concentration is2mM. The transmittance ofthe CdS thin film is relatively low when the ammonium acetate concentration is4mM. CdSthin film particle size becomes larger and uniformity with the increase of the pH value. Theintensity of the the (111) diffraction peak, which is seen at2θ=26.5°when the pH value of11.6. The band gap values of the CdS thin films prepared by different processes are higherthan the theoretical value of2.42(eV). |