Fabrication Of SiNWs And Its Optical Properties

Silicon nano-struture is a semiconductor nano-material with excelent chemical, physical and mechanical properties. Especially its photoluminescence properties may make the nano-integrated circuit come true. In this paper, we focus on the synthesis of silicon nanowire arrays and photoluminescence studies of silicon nanowire arrays. My work is as follows:Firstly, We fabricated silicon nanowire arrays by metal-assisted chemical etching method. We obtained the optimal technology parameters, according to the influence of the various experimental parameters e.g. the etching solution concentration, temperature and etching time. Based on the above study, we analyzed the formation mechanism of silicon nanowire arrays and find a way to fabricate silicon nano-hole arrays.Sencondly, The formation mechanism of the cluster structure of silicon nanowire arrays is analyzed, we think that the stability make a key role on forming the cluster structure.Thirdly, silicon is a indirect band gap semiconductor with low light-emitting efficiency. however, silicon nano-material is a direct band gap semiconductor with good optical properties. We analyzed the luminouse mechanism of silicon nanowire arrays by SEM and fluorescence spectophotometer.Lastly, The reflection spectrum of the silicon nanowire arrays and silicon nanohole arrays are analyzed by ultraviolet and visible spectrophotometer. The reflection spectra show that the silicon nanowire arrays and silicon nanohole arrays could drastically suppress the reflection over a spectral bandwidth ranging of200-800nm. As a result the silicon nano-materials may become a very potential material of photovoltaic field.