Rapid Preparation And Mechanism Research Of SmBiO₃and YBiO₃Buffer Layer By Chemical Solution Deposition

In this thesis, the rapid processing of chemical solution deposition (CSD) to prepare SmBiO3and YBiO3buffer layer on yttria-stabilized zirconia (YSZ) or lanthanum aluminate (LAO) substrate was studied and a preliminary study of the mechanism of their epitaxial growth was carried on.A route named three step heating based on mechanism of solid decomposition to separate the volatilization and decomposition had been proposed and proved in this paper. Furthermore the decomposition process was done in the epitaxial treatment process by remove the separated decomposition treatment process, then a two-step heating treatment process had been proposed and proved to shorten the time of total process to prepare REBiO3buffer layer film of evaporation, decomposition and phase epitaxial to less than2hours. The results indicated that the solvent or polyacrylate (PAA) and lactate of the solution with (water-free) metal nitrates dissolved could all be volatilized within40minutes. Test results showed that YBiO3and SmBiO3film prepared quickly by CSD with two-step heating treatment also appeared smooth and dense surface, and well cubic textured. SmBiO3and YBiO3buffer layer film with a RMS roughness of only1.7nm, and their ω scans (200) peak FWHM of only about0.6°. These results could be help to the development of the continually inexpensive manufacture of coated conductor.The mechanism of the rapid preparation process of the CSD REBiO3buffer layer film of in solid phase epitaxial process was studied. The results showed that:the traditional CSD method and three-step heat treatment method is mainly induced by the substrate epitaxial recrystallization mechanisms; two-step heat treatment method is mainly induced by the substrate-forming phase epitaxial mechanisms, the latter epitaxial recrystallization mechanisms also play a role. Further studies showed that:the REBiO3buffer layer was grown directly on the YSZ substrate and45°rotation on the LAO substrate growth. The results also showed that:the studied film-based systems in critical mismatch between7.18%～7.99%, higher than this value, thin film will not be solid state epitaxial growth; within the scope of critical mismatch the temperature range of epitaxial growth is mainly based on thin film thermodynamic nature of the material itself, regardless of the value of misfit. These results provided theoretical guidance for further study of REBiO3buffer layer and the solid phase epitaxial.