| Nanotechnology was first introduced in the1990s, Nanotechnology played a pivotal role in the promotion of scientific and technological progress, improve the degree of civilization of a society and quality of human existence. Worldwide have developed the corresponding development strategics, development of nanotechnology, support research and development of nanotechnology and materials in the field as the main driver of technological innovation in the century21.Quasi-one-dimensional semiconductor nano-materials has a broad application prospects such as nanosheets, nanoribbons andnanotubes, because of the small size and large surface area with excellent physical and chemical properties in the field of gas sensors, light-emitting diodes, photodetectors, and nanodevices for the current and future trends of nanotechnology and materials.GaiO3is a direct wide band gap semiconductor which transparent to visible light and his performance is stable at room temperature it can be used as a UV filter, gas sensors, UV and blue light-emitting diode and so on. CuO nanoparticle film as rare P-type semiconductor material it has an important application in superconducting materials, chemical catalysts, the biocatalyst and solar battery electrode material.The most Ga2O3nanomaterials have gas sensitivity to the film material prepared after quasi-one-dimensional materials, focusing on the luminescence properties, and changes of the electrical properties of t e surface oxygen adsorption caused virtually. Similarly, oxygen adsorption on the CuO nanoparticle film surface caused electrical characteristics of the changes and effection on the conductivity type. This article focus on these two aspects, the specific content of this paper is summarized as follows:1. We successfully prepared Ga2O3nanosheets in high temperature generous than the1000and pressure by CVD method, the Ga2O3nanosheets length up to several hundred microns,15μm width of only300nm thickness. The CuO nanoparticles prepared by the water bath method.2. The analysis of β-Ga2O3Nanoflakes under optimum parameters preparation, heating temperature is950℃, oxygen flow rate2sccm, the heating time not less than half an hour. Samples prepared under the optimal parameters for XRD, SEM, TEM characterization of samples generated for beta-Ga2O3single crystal lattice spacing or O.299nm. The HDS tests show that the sample contains only Ga and O of two elements, the growth mechanism of the material in the gas discussed-solid (VS) mechanism. Characterization of CuO, using the same method and preparation of polycryslalline samples.3. Photolithography sputtering technique used for prepared inlerdigilal electrodes Pt/Ti/SiO2/Si by thermal oxidation30nm SiO2/Si substrate. Single Ga2O3nanoribbons transferred on the inlerdigital electrodes, annealing, prepared simple device. Ⅳ curves measured at room temperature, and found him with a Pt electrode form a symmetrical dual Schottky contact. Combined with the metal work function of the semiconductor Fermi level theoretical analysis of β-G2O3N-type semiconductor. The impact of the dual Schottky contacts and surface oxygen adsorption to the electrical properties of the beta-Ga2O3devices were discussed.4. Preparation of a the CuO particle film simple device,electrical characteristics, Schottky contacts between it and the electrode is also formed. Found that in this device continuously energized conductive type P-type and N-type conversion, which is caused due to the adsorption of the surface oxygen, furthermore the test of the material in the case of the change in resistance of the formaldehyde gas then this theory confirmed. |
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