Electromagnetic Transport Properties Of Carbon-based Devices

Electronic not only contains the charge, but also the properties of the spin, spin field effecttransistor (spinFET) is to consider and use spin properties of electron which is ignored for a longtime. In this paper, the basic derivation of the coherent transport and scattering in quantum transporttransport. The NEGF usually applications in quantum transport, especially if bias and interactionexist in the system, NEGF method is more appropriate. This article focuses on the use ofnon-equilibrium Green’s function in the two-electrode structure devices, was derived composed bythe transmission coefficient of the current and conductance formula. It will provide the guiding roleof theory for the design and optimization of the spin field effect transistor devices by calculating thetransport properties and electrical properties of the spinFET.The main work of this paper are as follows:First, we studying spin transport properties of crystalline silicon. And then study the coherenttransport of silicon spinFET, and to study the transport properties and electrical properties underdifferent conditions, it can be seen from the calculation results in the coherent transport device haslarge magnetoresistance ratio when the source-drain voltage is amall.Second, the research on the basis coherent transport of the front silicon spinFET, study theelectrical properties of transport under the scattering transport and compare the coherent transport.The result show that the output current of the device without spin scattering is smaller than that withspin scattering in parallel configuration, the opposite results will be produced in anti-parallelconfiguration. These results are related spin fliping.Again, spin transport properties of zigzag graphene nanowires and arm graphene nanoribbonsare studied on the basis of previous studies, and studied its spin-transport properties in theB-doped,P-doped and edge defects. The study show that the energy gap of the system increases inanti-parallel configuration, especially zigzag graphene nanoribbons will show semiconductorcharacteristics; new bandgap will be produced with the B-doped, P-doped, and edge defects.Finally, study the electrical characteristics of spinFET with channel is zigzag graphenenanowires in anti-parallel configuration. The result show that the current output curve of thespinFET is similar to other spinFET with channel is semiconductor, the output current is small whenthe bias is small, but it has a very large switching voltage ratio.