Synthesize And Study Of One Dimensional GaN、SnO₂@MWCNTs Nanostructures

One dimensional materials have attracted extensive attentions in optical and electricaldevices due to their superior properties. Synthesize and study of one dimensional GaN、SnO₂@MWCNTs nanostructures have been carry out in my research. The main resultsinclude the following aspects:（1） Demonstrate a simple and attractive method to synthesize GaN NWs on anAu-coated GaN film （composed of a thin p-GaN film and a thick n-GaN film）/sapphire. Thegrowth mechanism for forming our GaN NWs is discussed. What influence of Pressure anddistance between substrate and source on GaN structure were also investigated.（2） Their ultraviolet photoresponse properties at zero bias were carried on under theultraviolet light with a wavelength of365nm. The GaN nanowires/film structure show betterperformance, exhibiting a short response time <0.1s and high sensitivity, being stable andreproducible with an on/off current contrast ratio of about1800. The GaN nanowires canenhanced20times responsibility compared to the GaN film without GaN nanowires and theenhancement mechanism is discussed.（3） SnO₂coated vertically aligned multi-walled carbon nanotubes （SnO₂@MWCNTs）were synthesized and analyzed by X-ray diffraction （XRD）, field emission scanning electronmicroscope （FESEM）, transmission electron microscope （TEM） and an X-ray energydispersive spectrometer （EDS）.（4） The capacitance behavior of SnO₂@MWCNTs has been studied. Results shows thatredox peaks are observed and the capacitance is increased after coated SnO₂.（5） The capacitance behavior of SnO₂@MWCNTs has been studied in differentslectrolyte. It has better performance in0.5M/L Na2SO4slectrolyte than in1M/L H2SO4slectrolyte.