Preparation Of DLC Films By Microwave ECR Plasma Enhanced Sputtering And In-situ Plasma Diagnosis

In this thesis work, DLC films was prepared by the microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalanced magnetron sputtering of carbon targets in Ar circumstances. A profiler was used to measure the film thickness, respectively, and Raman spectroscopy was used to study the structure and composition of the film.In order to observe the relation between the plasma parameters and the film properties, we used the floating harmonic probe technique to measure plasma parameters. It can solve the problem of rapidly failure of the diagnostic tool, i.e. the Langmuir probes, due to surface insulative coating. First, in order to optimize experiment parameters of the floating harmonic probe, we studied the influence of input voltage on the measurement of floating harmonic probe. The voltage amplitude do have certain influence on the measurement results at different pressures,but the data is stable when the amplitude fluctuation is smaller than3V and the data agrees well with the results of Single Langmuir probe. And then, we pay attention to the verification of the accuracy of floating harmonic probe by comparing its measurement results with those from Single Langmuir probe at different input microwave power, As expected, good agreement were received between the floating harmonic probe and single langmuir probe. The measurement represented an accuracy of4.8%, and0.08%with a SLP respectively. Finally, we verified the practicability of floating harmonic probe in the process of thin film deposition. It worked steadily in real circumstance of DLC film deposited, although the surface of the probe was polluted by the insulated films.Monitoring and controlling the process of DLC film deposition can be achieved.We also measured electron temperature and ion densities at various pressures and sputter voltage, and investigated the influences of these parameters on the quality of DLC filmsDLC films deposition is carried out with the carbon target at0.17Pa,0.5Pa,1.0Pa pressure respectively. The film prepared at0.5Pa has the maximum FWHM and the minimum value of ID/IG.When changing the target bias applied on the carbon target, the higher speed of the film deposition appears at-500V. This is identical with the inherent discharge mode (voltage mode and current mode) of the system. In addition, when increasing the bias at the target bias from-400V to-650V, we found that the film deposited at-600V has the maximum FWHM and the minimum value of ID/IG.